2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features

The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an …

Jan 19, 2025 · The 2N3055 is a power bipolar transistor designed to handle high power loads in the range of 100 V, and 15 amps. In this post I will comprehensively discuss the pinout function, …

View 2N3055 datasheet for technical specifications, dimensions and more at DigiKey.

The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity …

2N3055 is a bipolar junction transistor (BJT) that is widely used as a power transistor in various electronic circuits. It is an NPN (negative-positive-negative) transistor with a maximum collector …

Preferred devices are recommended choices for future use and best overall value. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Figure 2. Active Region Safe Operating Area. There are two …

The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications.

The 2N3055 is a classic NPN power bipolar junction transistor widely used in linear and switching applications. Built in a TO3 metal package, it offers high durability and effective heat dissipation, …

Mar 21, 2024 · 2N3055 is an NPN transistor commonly used in general applications like audio power amplifiers and as a series pass transistor in linear power supplies. It is one of the first multi-amp …