New IC is first in a series of isolated gate driver solutions optimised for GaN devices Rohm has developed an isolated gate ...

Navitas Semiconductor, developer of GaNFast GaN and GeneSiC SiC power semiconductors, has been awarded the ‘Outstanding ...

EPC Space has announced a radiation-hardened 300V GaN FET for high-voltage, high-power space applications, including ...

In July 2023, Renesas entered into a SiC wafer supply agreement with Wolfspeed, in which it provided a deposit of $2 billion.

Wolfspeed has entered into a Restructuring Support Agreement (RSA)with key lenders, including holders of more than 97 percent of its senior secured notes; Renesas Electronics' wholly owned US ...

The DCM32xx00 series of 2-channel digital isolators is available in the narrow 8-pin SOIC8-N package and offers stable ...

Alpha and Omega Semiconductor (AOS) has introduced its AONK40202 25V MOSFET in DFN3.3x3.3 Source-Down packaging technology.

STMicroelectronics’ STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and high thermal performance with ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a reverse blocking voltage (BV) higher than 1.7 kV after high-energy proton ...

APEC 2026's Organising Committee has sent out a call to qualified experts to present a Professional Education Seminar during ...

Shaun Milano, Senior Director Applications Marketing, and Carsten Himmele, Segment Marketing Manager, both at Allegro ...

Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High ...