Abstract: Using an appropriate formulation of field-effect transistor (FET) current as a nonlinear function of terminal voltages, and a simplified model of gain compression in common source amplifiers ...
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Abstract: AM/PM non-linearity of GaN HEMTs is analyzed with the help of physics-based industry standard ASM-HEMT model. A commercial GaN HEMT device is modeled with ASM-HEMT model. Accurate large ...
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