New IC is first in a series of isolated gate driver solutions optimised for GaN devices Rohm has developed an isolated gate ...

EPC Space has announced a radiation-hardened 300V GaN FET for high-voltage, high-power space applications, including ...

Navitas Semiconductor, developer of GaNFast GaN and GeneSiC SiC power semiconductors, has been awarded the ‘Outstanding ...

In July 2023, Renesas entered into a SiC wafer supply agreement with Wolfspeed, in which it provided a deposit of $2 billion.

Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High ...

Swansea University and Space Forge, pioneer in space-based materials manufacturing, have signed a major deal, making the ...

The DCM32xx00 series of 2-channel digital isolators is available in the narrow 8-pin SOIC8-N package and offers stable ...

STMicroelectronics’ STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and high thermal performance with ...

Wolfspeed has entered into a Restructuring Support Agreement (RSA)with key lenders, including holders of more than 97 percent of its senior secured notes; Renesas Electronics' wholly owned US ...

APEC 2026's Organising Committee has sent out a call to qualified experts to present a Professional Education Seminar during ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a reverse blocking voltage (BV) higher than 1.7 kV after high-energy proton ...

Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...