A technical paper titled “Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance” was published by researchers at ROHM Company. Find the technical ...
KAWASAKI, Japan, November 12, 2024--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for ...
This file type includes high resolution graphics and schematics when applicable. In some situations, it becomes necessary to drive a MOSFET (or IGBT) with a voltage that’s lower than its ...
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