The 2SA1648 is a PNP silicon epitaxial transistor featuring fast switching speed for high current control. It features low collector saturation voltage, as well as high DC current gain and excellent ...

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...

Neubiberg, Germany: The 650V CoolMOS C6/E6 series of high-performance power MOSFETs combine the advantages of modern superjunction (SJ) devices with easy control of switching behaviour as well as high ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

Recent advances in semiconductor technology have pushed the concept of transistors with switching speeds greater than one terahertz, or one trillion cycles per second, closer to reality. Transistors ...

New Monolithic GaN converters from STMicroelectronics help boost energy savings in a wide range of applications.

An international research team led by Skoltech and IBM has created an extremely energy-efficient optical switch that could replace electronic transistors in a new generation of computers manipulating ...

According to Growth Market Reports, the global Metallic Oxide Semiconductor Field Effect Transistor (MOSFET) market size ...

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