Compound Semiconductor

GaN-on-silicon HEMTs for tomorrow’s handsets?

A collaboration between A*STAR, Nanyang Technological University and Soitec is claiming to have broken new ground in the ...
EDN

650-V GaN HEMT resides in TOLL package

Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, ...
Morningstar

ROHM Launches 650V GaN HEMT in a Compact, High-heat Dissipation TO-Leadless Package

ROHM began mass production of its 1 st generation 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package. This time, ...
Electronic Design

Gravitate to These GaN Apps to Enhance Power Performance

How to improve power-converter density and efficiency using GaN HEMT in a half-bridge configuration. What’s the difference between Direct-Drive GaN and cascoded D-mode GaN designs? Savvy power design ...
AZOM

How To Measure High Aspect Ratio HEMT Vias Non-Destructively Using 3D Optical Profiling

Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...
Business Wire

Teledyne HiRel Semiconductors Releases High-Power RF GaN Switch (30 MHz to 5 GHz)

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers high peak power and ...